Highly Durable Discrete Igbt

Blessed with a team of dexterous professionals, our organization a Arihant Elsys Pvt. Ltd.a counted as leading Manufacturer & Supplier of Highly Durable Discrete IGBT in New Delhi, Delhi, India.
1. Lowest switching losses, Highest Efficiency, Soft current turn-off waveform for low EMI, Higher Breakthrough voltage, i.e. is 1350 V min (Third Gen. IGBT).
2. Reduction in switching losses compared to High Speed 3, Low gate drive power requirement (TrenchSTOP 5)
3. Operating range of DC upto 30kHZ, Short Circuit capability of 5i? S, Smooth Switching frequency leads to low EMI levels (RC Drive & RC Drives Fast)
4. Low switching losses for higher efficiency, Fast switching behaviour with low EMI emissions, Short Circuit capability (High Speed H3)
5. Lowest switching losses, stable temperature behaviour, Soft current turn-off waveforms, High breakthrough voltage ( TRENCHSTOP for Soft switching)

Clients can avail this Highly Durable Discrete IGBT at industry leading prices from us.