Rd07mvs1 Transistor

Owing to our years of industry experience and market understanding, we are leading Supplier of RD07MVS1 Transistor in Shenzhen, Guangdong, China.
RD07MVS1 is a MOS FET type transistor
specifically designed for VHF/UHF RF
power amplifiers applications
FEATURES
High power gain:
Pout>7W, Gp>10dB@Vdd=7.2V,f=520MHz
High Efficiency: 60%typ. (175MHz)
High Efficiency: 55%typ. (520MHz)
APPLICATION
For output stage of high power amplifiers in
VHF/UHF band mobile radio sets
RoHS COMPLIANT
RD07MVS1-101,T112 is a RoHS compliant products.
RoHS compliance is indicate by the letter a Ga after the Lot Marking.
This product include the lead in high melting temperature type solders.
How ever,it applicable to the following exceptions of RoHS Directions.
Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)